vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 15-nov-11 1 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage phase control thyristor, 25 a features ? designed and qualified for industrial level ? fully isolated package (v ins = 2500 v rms ) ? ul e78996 pending ? compliant to rohs directive 2002/95/ec ? 125 c max. operatin g junction temperature ? halogen-free according to iec 61249-2-21 definition (-m3 only) applications ? typical usage is in input rectification crowbar (soft start) and ac switch in motor control, ups, welding, and battery charge description the vs-25tts...fp... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase cont rol applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. product summary package to-220fp diode variation single scr i t(av) 16 a v drm /v rrm 800 v, 1200 v v tm 1.25 v i gt 45 ma t j - 40 c to 125 c ( g ) 3 2 (a) 1 (k) to-220ab full-pak output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, common heatsink of 1 c/w 18 22 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 16 a i rms 25 v rrm /v drm 800/1200 v i tsm 300 a v t 16 a, t j = 25 c 1.25 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma vs-25tts08fppbf, vs-25tts08fp-m3 800 800 10 vs-25tts12fppbf, vs-25tts12fp-m3 1200 1200
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 15-nov-11 2 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 85 c, 180 conduction half sine wave 16 a maximum rms on-state current i rms 25 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 350 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 630 maximum i 2 ? t for fusing i 2 ? t t = 0.1ms to 10 ms, no voltage reapplied 6300 a 2 ? s maximum on-state voltage drop v tm 16 a, t j = 25 c 1.25 v on-state slope resistance r t t j = 125 c 12.0 m ? threshold voltage v t(to) 1.0 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a - 100 maximum latching current i l anode supply = 6 v, resistive load 200 maximum rate of rise of off-state voltage dv/dt 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 10 c 60 ma anode supply = 6 v, resistive load, t j = 25 c 45 anode supply = 6 v, resistive load, t j = 125 c 20 maximum required dc gate voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 10 c 2.5 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.25 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 15-nov-11 3 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current ra ting characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 1.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab full-pak (94/v0) 25tts08fp 25tts12fp 70 80 90 100 110 120 130 0 5 10 15 20 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average on-state current (a) 25tts.. se ries r ( dc) = 1.5 c / w thjc 70 80 90 100 110 120 130 0 5 10 15 20 25 30 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average on-state current (a) 25tts.. series r (dc) = 1.5 c/ w thjc 0 5 10 15 20 25 048121620 rm s li m i t conduction angle maximum average on-sta te power loss (w) average on-state current (a) 180 120 90 60 30 25tt s. . se r i e s t = 1 2 5 c j 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) avera ge on-sta te current (a) 2 5 tts. . se r i e s t = 125c j
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 15-nov-11 4 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics 150 200 250 300 350 110100 number of equal amplitude half cycle current pulses (n) pe a k ha l f s ine wave on-state current (a) init ia l t = 125c @ 6 0 h z 0 . 0 0 8 3 s @ 5 0 h z 0 . 0 1 0 0 s j 25tt s. . se r i e s at any rated load condition and with rated v applied following surge. rrm 100 150 200 250 300 350 400 0.01 0.1 1 pe a k ha lf s ine wa ve on-state current (a) pu l se tr a i n d u ra t i o n ( s) maximum non repetitive surge current versus pulse train duration. control of conduc tion may not be maintained. initia l t = 125c no voltage reapplied ra t e d v re a p p l i e d rrm j 25tts.. se rie s 1 10 100 1000 012345 t = 2 5 c j instantaneous on-state current (a) insta nta neous on-sta te vo lta g e (v) t = 1 2 5 c j 25tts .. series 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 st e a d y st a t e v a l u e (dc operation) 25tts.. series thjc si n g l e p u l se transient thermal imped anc e z (c/ w)
vs-25tts..fppbf series, vs-25tts..fp-m3 series www.vishay.com vishay semiconductors revision: 15-nov-11 5 document number: 94384 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - gate characteristics ordering information table 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) insta nta ne o us ga te current (a) insta nta ne o us g a te volta g e (v) tj = 2 5 c t j = 125 c b)recommended load line for frequenc y limited by pg(av) a)recommended load line for rated di/dt: 10 v, 20 ohms tr = 0.5 s, tp >= 6 s tj = - 1 0 c 25tts.. serie s ig d vg d <= 30% rated di/ dt: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 w, t p = 1 m s (2) pgm = 20 w, t p = 2 m s (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-25tts08fppbf 50 1000 anti static plastic tubes vs-25tts08fp-m3 50 1000 anti static plastic tubes vs-25tts12fppbf 50 1000 anti static plastic tubes vs-25tts12fp-m3 50 1000 anti static plastic tubes links to related documents dimensions www.vishay.com/doc?95072 part marking information to-220fp pbf www.vishay.com/doc?95069 to-220fp -m3 www.vishay.com/doc?95456 2 - current rating (25 = 25 a) 3 - circuit configuration: 4 - package: 5 t = single thyristor - type of silicon: 6 - voltage code x 100 = v rrm t = to-220ab standard recovery rectifier 7 - full-pak 8 08 = 800 v 12 = 1200 v device code 6 2 4 3 5 7 8 25 t t s 12 fp pbf 1 1 - vishay semiconductors product - environmental digit: pbf = lead (pb)-free and rohs compliant -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free v s -
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95072 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 5 0.5 0.9 0.7 1.15 1.05 2.54 typ. 2.54 typ. 2.8 2.6 1.4 1.3 typ. 10 16.4 15.4 16.0 15.8 13.56 13.05 0.61 0.38 2.85 2.65 3.7 3.2 4.8 4.6 3.3 3.1 7.31 6.91 10.6 10.4 hole ? 3.4 3.1 (2 places) r 0.7 r 0.5 lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220 full-pak
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